This study seeks to explain removal rate trends and scatter in thermal silicon dioxide and PECVD tetraethoxysilane-sourced silicon dioxide (PE-TEOS) CMP using an augmented version of the Langmuir-Hinshelwood mechanism. The proposed model combines the chemical and mechanical facets of interlevel dielectric (ILD) CMP and hypothesizes that the chemical reaction temperature is determined by transient flash heating. The agreement between the model and data suggests that the main source of apparent scatter in removal rate data plotted as rate versus pressure times velocity is competition between mechanical and thermochemical mechanisms. A method of visualizing removal rate data is described that shows, apart from any particular interpretative theory, that a smooth and easily interpretable surface underlies the apparent scatter.
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July 2005
Research Papers
Revisiting the Removal Rate Model for Oxide CMP
Jamshid Sorooshian,
Jamshid Sorooshian
Department of Chemical and Environmental Engineering, University of Arizona, Tucson, Arizona 85721
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Leonard Borucki,
Leonard Borucki
Intelligent Planar, 3831 East Ivy Street, Mesa, Arizona 85205
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David Stein,
David Stein
Sandia National Laboratories, MS 1084, Albuquerque, New Mexico 87185
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Robert Timon,
Robert Timon
Sandia National Laboratories, MS 1084, Albuquerque, New Mexico 87185
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Dale Hetherington,
Dale Hetherington
Sandia National Laboratories, MS 1084, Albuquerque, New Mexico 87185
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Ara Philipossian
Ara Philipossian
Department of Chemical and Environmental Engineering, University of Arizona, Tuscon, Arizona 85721
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Jamshid Sorooshian
Department of Chemical and Environmental Engineering, University of Arizona, Tucson, Arizona 85721
Leonard Borucki
Intelligent Planar, 3831 East Ivy Street, Mesa, Arizona 85205
David Stein
Sandia National Laboratories, MS 1084, Albuquerque, New Mexico 87185
Robert Timon
Sandia National Laboratories, MS 1084, Albuquerque, New Mexico 87185
Dale Hetherington
Sandia National Laboratories, MS 1084, Albuquerque, New Mexico 87185
Ara Philipossian
Department of Chemical and Environmental Engineering, University of Arizona, Tuscon, Arizona 85721
Contributed by the Tribology Division for publication in the ASME JOURNAL OF TRIBOLOGY. Manuscript received by the Tribology Division May 14, 2004; revised manuscript received January 3, 2005. Review conducted by: L. Chang.
J. Tribol. Jul 2005, 127(3): 639-651 (13 pages)
Published Online: June 13, 2005
Article history
Received:
May 14, 2004
Revised:
January 3, 2005
Online:
June 13, 2005
Citation
Sorooshian, J., Borucki, L., Stein , D., Timon , R., Hetherington, D., and Philipossian, A. (June 13, 2005). "Revisiting the Removal Rate Model for Oxide CMP ." ASME. J. Tribol. July 2005; 127(3): 639–651. https://doi.org/10.1115/1.1866168
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