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Luke Yates
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Proceedings Papers

Investigation of the Heterogeneous Thermal Conductivity in Bulk CVD Diamond for Use in Electronics Thermal Management

Luke Yates, Ramez Cheaito, Aditya Sood, Zhe Cheng, Thomas Bougher, Mehdi Asheghi, Kenneth Goodson, Mark Goorsky, Firooz Faili, Dan Twitchen, Samuel Graham
Proc. ASME. InterPACK2017, ASME 2017 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, V001T04A014, August 29–September 1, 2017
Publisher: American Society of Mechanical Engineers
Paper No: IPACK2017-74163
https://doi.org/10.1115/IPACK2017-74163
View Paper titled, Investigation of the Heterogeneous Thermal Conductivity in Bulk CVD Diamond for Use in Electronics Thermal Management
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Topics: Electronics, Synthetic diamonds, Thermal conductivity, Thermal management, Diamonds, Chemical vapor deposition, Electron backscatter diffraction, Lasers, Boron, Heat flux
Proceedings Papers

The Impact of Interfacial Layers on the Thermal Boundary Resistance and Residual Stress in GaN on Si Epitaxial Layers

Luke Yates, Thomas L. Bougher, Thomas Beechem, Baratunde A. Cola, Samuel Graham
Proc. ASME. InterPACK2015, Volume 3: Advanced Fabrication and Manufacturing; Emerging Technology Frontiers; Energy, Health and Water- Applications of Nano-, Micro- and Mini-Scale Devices; MEMS and NEMS; Technology Update Talks; Thermal Management Using Micro Channels, Jets, Sprays, V003T04A009, July 6–9, 2015
Publisher: American Society of Mechanical Engineers
Paper No: IPACK2015-48259
https://doi.org/10.1115/IPACK2015-48259
View Paper titled, The Impact of Interfacial Layers on the Thermal Boundary Resistance and Residual Stress in GaN on Si Epitaxial Layers
Open the PDF for The Impact of Interfacial Layers on the Thermal Boundary Resistance and Residual Stress in GaN on Si Epitaxial Layers in another window
Topics: Gallium nitride, Interfacial thermal resistance, Stress, Polishing equipment, Electronics, Crystal structure, Electron mobility, Flow (Dynamics), Heat, Reliability