... produced from a p -type silicon-on-insulator (SOI) wafer with 35  μ m-thick device layer of 0.05 Ω cm, 2  μ m-thick buried oxide layer, and 300  μ m-thick handle layer. The device designed consists of three main parts of comb structures, which are used as an electrostatic force actuator, a capacitive...

... Vlassak. 09 10 2011 10 02 2012 The ductile-to-brittle cutting mode transition in single grit diamond scribing of monocrystalline silicon is investigated in this paper. Specifically, the effects of scriber tip geometry, coefficient of friction, and external hydrostatic pressure...

... machining are able to amplify the actuator’s displacement by a factor of 3.8 along the tensile direction. The biaxial test specimen prepared using conventional micromachining processes is composed of a cross-shaped film section and chucking parts supported by silicon springs. After square holes in four...

...Ming Gan; Vikas Tomar The functioning and performance of today’s integrated circuits and sensors are highly affected by the thermal properties of microscale silicon structures. Due to the well known size effect, the thermal properties of microscale silicon structures are not the same as those...

... were sponsored by the Department of Energy, Division of Scientific User Facilities. We have recalled the basic elements of the 3D X-ray microscopy technique, and we have shown that 3D X-ray microscopy measurements of elastic and plastic deformation in cylindrically bent silicon plates provide...

...Jiunn-Jyh Junz Wang; Yong-Yuan Liao This paper investigated the scribing process characteristics of the hard and brittle materials including single crystal silicon, STV glass, and sapphire substrate. Under various cutting angles, major process characteristics are examined including the groove...

...N. Kalyanasundaram; J. B. Freund; H. T. Johnson Highly disordered, ion-processed silicon is studied using a molecular dynamics simulation with empirical interatomic potentials. The surface free energy density, stress-strain relations, and continuum surface features of silicon, bombarded...

..., whose design and fabrication are important for the future of high-performance devices that are compatible with current silicon technologies ( 1 2 ). This degree of control was strongly facilitated by the incorporation of carbon into Si and Ge matrices...

.... Manuscript received January 27, 2004; revision received June 23, 2004. Review conducted by: A. Pelegri. 27 January 2004 23 June 2004 22 02 2005 silicon elemental semiconductors semiconductor thin films micromechanical devices plastic deformation failure (mechanical) creep...

... et al. ( 18 ). Our interest here is thus to understand the interaction of such a surface instability which leads to nucleationless growth with spatially varying mismatch strain-fields. silicon germanium semiconductor quantum dots self-assembly epitaxial growth internal stresses surface...

... to be different from their bulk counterparts. In this paper, low- k porous silica thin films spin coated on silicon substrates are studied. The roughness of spin-on coated porous silica films is analyzed with in-situ imaging and their mechanical properties are determined using nanoindentation. A Berkovich type...