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Keywords: transistors
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Journal Articles
Publisher: ASME
Article Type: Research Papers
J. Heat Mass Transfer. July 2006, 128(7): 638–647.
Published Online: December 21, 2005
...-equilibrium phonon distribution function and compare predictions from this model with data for ballistic transport in silicon. The solution to the steady-state transport equations for bulk silicon transistors shows that energy stagnation at the hotspot results in an excess equivalent temperature rise of about...
Journal Articles
Journal Articles
Publisher: ASME
Article Type: Technical Papers
J. Heat Mass Transfer. October 2003, 125(5): 896–903.
Published Online: September 23, 2003
...Sreekant V. J. Narumanchi; Jayathi Y. Murthy; Cristina H. Amon In compact transistors, large electric fields near the drain side create hot spots whose dimensions are smaller than the phonon mean free path in the medium. In this paper, we present a study of unsteady hot spot behavior. The unsteady...
Journal Articles
Publisher: ASME
Article Type: Technical Papers
J. Heat Mass Transfer. February 2001, 123(1): 130–137.
Published Online: June 25, 2000
... to be carefully examined for semiconductor devices in which the channel length is comparable with or smaller than the phonon mean free path. The phonon mean free path in silicon at room temperature is near 300 nm and exceeds the channel length of contemporary transistors. This work numerically integrates the two...