... volume fractions and superlattice periods. Details of the nonequilibrium energy exchange between optical and acoustic phonons that originate from the mismatch of phonon spectra in silicon and germanium are delineated for the first time. Conditions are identified for which this effect can produce...

... value of unity. In heterogeneous bulk materials, the transmission function is reduced significantly due to the junction of dissimilar materials. 21 12 2010 03 06 2011 10 06 2011 20 09 2011 20 09 2011 eigenvalues and eigenfunctions elemental semiconductors germanium...

... germanium heat transfer interface phenomena molecular dynamics method phonons silicon thermal conductivity thermal boundary conductance phonon classical limit silicon germanium diffuse mismatch model molecular dynamics The phonon thermal boundary conductance between two solids...

... thickness increases. germanium heat transfer molecular dynamics method silicon molecular dynamics phonon transport interface wave packet As heat flows across the interface between two different materials, a temperature drop is found at the interface, which may be represented...

...-assembly is an emerging epitaxial technology to design ultradense arrays of germanium QDs in silicon for many promising electronic and photonic applications such as quantum computing, where accurate QD positioning is required. We theoretically demonstrate that high-density three-dimensional (3D) arrays...

... density functional theory elemental semiconductors germanium Ge-Si alloys molecular dynamics method nanostructured materials silicon thermal conductivity ab initio molecular dynamics thermal energy transport nanoscale Moore’s law predicted that the number of transistors on a chip...

... ) approximately by a factor of 2. Although there is limited experimental data for the Seebeck coefficient for silicon thin films, it must be noted that the trends predicted by our model match the trends of the experimental data for bulk silicon. 03 03 2006 29 07 2006 silicon germanium...

...W. Zhang; T. S. Fisher; N. Mingo An atomistic Green’s function method is developed to simulate phonon transport across a strained germanium (or silicon) thin film between two semi-infinite silicon (or germanium) contacts. A plane-wave formulation is employed to handle the translational symmetry...

...J. D. Chung, Assistant Professor; A. J. H. McGaughey, Graduate Student; M. Kaviany, Professor, ASME Fellow The role of phonon dispersion in the prediction of the thermal conductivity of germanium between temperatures of 2 K and 1000 K is investigated using the Holland approach. If no dispersion...