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Journal Articles

Nonlinear Electro-Thermal Monte Carlo Device Simulation

Ky Merrill, Marco Saraniti

Publisher: ASME

J. Heat Mass Transfer. February 2020, 142(2): 022106.

Paper No: HT-19-1379

https://doi.org/10.1115/1.4045305

Published Online: December 9, 2019

View Article titled, Nonlinear Electro-Thermal Monte Carlo Device Simulation

Topics: Boundary-value problems, Gallium nitride, Heat, Simulation, Temperature, Thermal conductivity, Phonons, Electron mobility, Transistors

Journal Articles

Electron Mobility across Grain Boundaries in Graphene Synthesized using Chemical Vapor Deposition Process

Fei Long, Chang Kyoung Choi

Publisher: ASME

J. Heat Mass Transfer. August 2017, 139(8): 080901.

Paper No: HT-17-1156

https://doi.org/10.1115/1.4036875

Published Online: June 5, 2017

View Article titled, Electron Mobility across Grain Boundaries in Graphene Synthesized using Chemical Vapor Deposition Process

Topics: Chemical vapor deposition, Electron mobility, Grain boundaries, Graphene, Potential barrier, Atomic force microscopy, Dislocations, Density, Electric potential, Electrical conductivity

Journal Articles

Mapping Thickness Dependent Thermal Conductivity of GaN

Elbara Ziade, Jia Yang, Gordie Brummer, Denis Nothern, Theodore Moustaks, Aaron Schmidt

Publisher: ASME

J. Heat Mass Transfer. February 2016, 138(2): 020906.

Paper No: HT-15-1708

https://doi.org/10.1115/1.4032234

Published Online: January 18, 2016

View Article titled, Mapping Thickness Dependent Thermal Conductivity of GaN

Topics: Gallium nitride, Thermal conductivity, Probes, Pumps, Adhesion, Corners (Structural elements), Electron mobility, Errors, Film thickness, Fittings

Journal Articles

Infrared Radiative Properties of Heavily Doped Silicon at Room Temperature

S. Basu, B. J. Lee, Z. M. Zhang

Publisher: ASME

J. Heat Mass Transfer. February 2010, 132(2): 023301.

https://doi.org/10.1115/1.4000171

Published Online: November 30, 2009

View Article titled, Infrared Radiative Properties of Heavily Doped Silicon at Room Temperature

Topics: Boron, Electron mobility, Ionization, Modeling, Reflectance, Silicon, Temperature, Thin films, Annealing, Wavelength

Journal Articles

Heat Generation and Transport in Submicron Semiconductor Devices

K. Fushinobu, A. Majumdar, K. Hijikata

Publisher: ASME

J. Heat Mass Transfer. February 1995, 117(1): 25–31.

https://doi.org/10.1115/1.2822317

Published Online: February 1, 1995

View Article titled, Heat Generation and Transport in Submicron Semiconductor Devices

Topics: Heat, Semiconductor devices, Electrons, Gallium arsenide, Phonons, Semiconductors (Materials), Acoustics, Electric fields, Electron mobility, Electronic equipment

Journal citation

NARROW

Nonlinear Electro-Thermal Monte Carlo Device Simulation

Electron Mobility across Grain Boundaries in Graphene Synthesized using Chemical Vapor Deposition Process

Mapping Thickness Dependent Thermal Conductivity of GaN

Infrared Radiative Properties of Heavily Doped Silicon at Room Temperature

Heat Generation and Transport in Submicron Semiconductor Devices

ASME Journals

ASME Conference Proceedings

ASME eBooks

Resources

Opportunities

Nonlinear Electro-Thermal Monte Carlo Device Simulation

Electron Mobility across Grain Boundaries in Graphene Synthesized using Chemical Vapor Deposition Process

Mapping Thickness Dependent Thermal Conductivity of GaN

Infrared Radiative Properties of Heavily Doped Silicon at Room Temperature

Heat Generation and Transport in Submicron Semiconductor Devices

ASME Journals

ASME Conference Proceedings

ASME eBooks

Resources

Opportunities

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