Abstract
Thermal stress-induced protrusions of copper through-silicon-vias (Cu-TSVs) during thermal processing pose substantial reliability concerns in three-dimensional (3D) system integration. In this study, a phase-field-crystal (PFC) model is used to investigate the protrusions and microstructural evolutions of blind Cu-TSVs under different loading conditions. Protrusions are observed only when the TSVs are under εx, εy, and γxy, whereas no protrusions are observed when the TSVs are subjected to pure shear strains γyx. The simulation results suggest that the grains in the top layer of a TSV contribute more to both the protrusion profile and the protrusion height than the grains in the lower layers. Moreover, the protrusion is larger when the misorientation among the grains is larger and the grain size along the y-direction is smaller. In addition, a phenomenological model linking protrusion and microstructural factors and a visual guide from the viewpoint of plastic flow are provided to understand the origins of Cu-TSV protrusion.
Issue Section:
Research Papers
Topics:
Grain size,
Shear (Mechanics),
Simulation,
Deformation,
Reliability,
Atoms,
Simulation results,
Copper
References
1.
Lau
,
J. H.
, 2019
, “
Recent Advances and Trends in Fan-Out Wafer/Panel-Level Packaging
,” ASME J. Electron. Packag.
,
141
(4
), p. 040801
.10.1115/1.40433412.
Huang
,
T. B.
,
Chou
,
B.
,
Tong
,
J.
,
Ogawa
,
T.
,
Sundaram
,
V.
, and
Tummala
,
R. R.
, 2017
, “
Via-First Process to Enable Copper Metallization of Glass Interposers With High-Aspect-Ratio, Fine-Pitch Through-Package-Vias
,” IEEE Trans. Compon., Packag. Manuf. Technol.
,
7
(4
), pp. 544
–551
.10.1109/TCPMT.2017.26542193.
Zhu
,
W.
,
Dong
,
G.
, and
Yang
,
Y.
, 2018
, “
Power and Thermal Constraints-Driven Modeling and Optimization for Through Silicon Via-Based Power Distribution Network
,” ASME J. Electron. Packag.
,
140
(4
), p. 041002
.10.1115/1.40406704.
Lee
,
C.
,
Hung
,
C.
,
Cheung
,
C.
,
Yang
,
P.
,
Kao
,
C.
,
Chen
,
D.
,
Shih
,
M.
,
Chien
,
C. C.
,
Hsiao
,
Y.
,
Chen
,
L.
,
Su
,
M.
,
Alfano
,
M.
,
Siegel
,
J.
,
Din
,
J.
, and
Black
,
B.
, 2016
, “
An Overview of the Development of a GPU With Integrated HBM on Silicon Interposer
,” IEEE 66th Electronic Components and Technology Conference
(ECTC
), Las Vegas, NV, May 31–June 3, pp. 1439
–1444
.10.1109/ECTC.2016.3485.
Rahim
,
K.
, and
Mian
,
A.
, 2017
, “
A Review on Laser Processing in Electronic and MEMS Packaging
,” ASME J. Electron. Packag.
,
139
(3
), p. 030801
.10.1115/1.40362396.
Bao
,
C.
, and
Srivastava
,
A.
, 2019
, “
Reducing Timing Side-Channel Information Leakage Using 3D Integration
,” IEEE Trans. Dependable Secure Comput.
,
16
(4
), pp. 665
–678
.10.1109/TDSC.2017.27121567.
Shen
,
W.
,
Lin
,
Y.
,
Chen
,
S.
,
Chang
,
H.
,
Chang
,
T.
,
Lo
,
W.
,
Lin
,
C.
,
Chou
,
Y.
,
Kwai
,
D.
,
Kao
,
M.
, and
Chen
,
K.
, 2018
, “
3-D Stacked Technology of DRAM-Logic Controller Using Through-Silicon Via (TSV)
,” IEEE J. Electron Devices Soc.
,
6
, pp. 396
–402
.10.1109/JEDS.2018.28153448.
Shulaker
,
M. M.
,
Hills
,
G.
,
Park
,
R. S.
,
Howe
,
R. T.
,
Saraswat
,
K.
,
Wong
,
H. S. P.
, and
Mitra
,
S.
, 2017
, “
Three-Dimensional Integration of Nanotechnologies for Computing and Data Storage on a Single Chip
,” Nature
,
547
(7661
), pp. 74
–78
.10.1038/nature229949.
Shen
,
W. W.
, and
Chen
,
K. N.
, 2017
, “
Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV)
,” Nanoscale Res. Lett.
,
12
(1
), p. 56
.10.1186/s11671-017-1831-410.
Gambino
,
J. P.
,
Adderly
,
S. A.
, and
Knickerbocker
,
J. U.
, 2015
, “
An Overview of Through-Silicon-Via Technology and Manufacturing Challenges
,” Microelectron. Eng.
,
135
, pp. 73
–106
.10.1016/j.mee.2014.10.01911.
Araga
,
Y.
,
Nagata
,
M.
,
Miura
,
N.
,
Ikeda
,
H.
, and
Kikuchi
,
K.
, 2018
, “
Measurement and Analysis of Power Noise Characteristics for EMI Awareness of Power Delivery Networks in 3-D Through-Silicon Via Integration
,” IEEE Trans. Compon., Packag. Manuf. Technol.
,
8
(2
), pp. 277
–285
.10.1109/TCPMT.2017.276706512.
Srinivasa
,
S.
,
Li
,
X.
,
Chang
,
M.
,
Sampson
,
J.
,
Gupta
,
S. K.
, and
Narayanan
,
V.
, 2018
, “
Compact 3-D-SRAM Memory With Concurrent Row and Column Data Access Capability Using Sequential Monolithic 3-D Integration
,” IEEE Trans. Very Large Scale Integration (VLSI) Syst.
,
26
(4
), pp. 671
–683
.10.1109/TVLSI.2017.278756213.
Jalilvand
,
G.
,
Ahmed
,
O.
,
Spinella
,
L.
,
Zhou
,
L.
, and
Jiang
,
T.
, 2019
, “
The Effective Control of Cu Through-Silicon Via Extrusion for Three-Dimensional Integrated Circuits by a Metallic Cap Layer
,” Scr. Mater.
,
164
, pp. 101
–104
.10.1016/j.scriptamat.2019.01.02914.
De Wolf
,
I.
,
Croes
,
K.
, and
Beyne
,
E.
, 2018
, “
Expected Failures in 3-D Technology and Related Failure Analysis Challenges
,” IEEE Trans. Compon., Packag. Manuf. Technol.
,
8
(5
), pp. 711
–718
.10.1109/TCPMT.2018.281032115.
Vogel
,
D.
,
Auerswald
,
E.
,
Auersperg
,
J.
,
Bayat
,
P.
,
Rodriguez
,
R.
,
Zahn
,
D.
,
Rzepka
,
S.
, and
Michel
,
B.
, 2014
, “
Stress Analyses of High Spatial Resolution on TSV and BEoL Structures
,” Microelectron. Reliab.
,
54
(9–10
), pp. 1963
–1968
.10.1016/j.microrel.2014.07.09816.
Che
,
F. X.
,
Putra
,
W. N.
,
Heryanto
,
A.
,
Trigg
,
A.
,
Zhang
,
X.
, and
Gan
,
C. L.
, 2013
, “
Study on Cu Protrusion of Through-Silicon Via
,” IEEE Trans. Compon., Packag. Manuf. Technol.
,
3
(5
), pp. 732
–739
.10.1109/TCPMT.2013.225295517.
Okoro
,
C.
,
Yang
,
Y.
,
Vandevelde
,
B.
,
Swinnen
,
B.
,
Vandepitte
,
D.
,
Verlinden
,
B.
, and
de Wolf
,
I.
, 2008
, “
Extraction of the Appropriate Material Property for Realistic Modeling of Through-Silicon-Vias Using μ-Raman Spectroscopy
,” International Interconnect Technology Conference
, Burlingame, CA, June 1–4, pp. 16
–18
.18.
Liu
,
X.
,
Thadesar
,
P. A.
,
Taylor
,
C. L.
,
Oh
,
H.
,
Kunz
,
M.
,
Tamura
,
N.
,
Bakir
,
M. S.
, and
Sitaraman
,
S. K.
, 2014
, “
In-Situ Microscale Through-Silicon Via Strain Measurements by Synchrotron X-Ray Microdiffraction Exploring the Physics Behind Data Interpretation
,” Appl. Phys. Lett.
,
105
(11
), p. 112109
.10.1063/1.489614119.
Jiang
,
T.
,
Im
,
J.
,
Huang
,
R.
, and
Ho
,
P. S.
, 2015
, “
Through-Silicon Via Stress Characteristics and Reliability Impact on 3D Integrated Circuits
,” MRS Bull.
,
40
(3
), pp. 248
–256
.10.1557/mrs.2015.3020.
Messemaeker
,
J. D.
,
Roussel
,
P. J.
,
Pedreira
,
O. V.
,
der Donck
,
T. V.
,
Huylenbroeck
,
S. V.
,
Beyne
,
E.
,
Wolf
,
I. D.
,
Stucchi
,
M.
, and
Croes
,
K.
, 2017
, “
Statistical Distribution of Through-Silicon Via Cu Pumping
,” IEEE Trans. Device Mater. Reliab.
,
17
(3
), pp. 549
–559
.10.1109/TDMR.2017.273815421.
Liu
,
J.
,
Huang
,
Z.
,
Conway
,
P. P.
,
Altmann
,
F.
,
Petzold
,
M.
, and
Naumann
,
F.
, 2017
, “
On Reproducing the Copper Extrusion of Through-Silicon-Vias From the Atomic Scale
,” 18th International Conference on Electronic Packaging Technology
(ICEPT
), Harbin, China, Aug. 16–19, pp. 789
–796
.10.1109/ICEPT.2017.804656522.
Elder
,
K. R.
,
Katakowski
,
M.
,
Haataja
,
M.
, and
Grant
,
M.
, 2002
, “
Modeling Elasticity in Crystal Growth
,” Phys. Rev. Lett.
,
88
(24
), p. 245701
.10.1103/PhysRevLett.88.24570123.
Elder
,
K. R.
, and
Grant
,
M.
, 2004
, “
Modeling Elastic and Plastic Deformations in Nonequilibrium Processing Using Phase Field Crystals
,” Phys. Rev. E
,
70
(5
), p. 051605
.10.1103/PhysRevE.70.05160524.
Choudhary
,
M. A.
, and
Kundin
,
J.
, 2017
, “
Heteroepitaxial Anisotropic Film Growth of Various Orientations
,” J. Mech. Phys. Solids
,
101
, pp. 118
–132
.10.1016/j.jmps.2017.01.00625.
Jreidini
,
P.
,
Kocher
,
G.
, and
Provatas
,
N.
, 2018
, “
Classical Nucleation Theory in the Phase-Field Crystal Model
,” Phys. Rev. E
,
97
(4
), p. 042802
.10.1103/PhysRevE.97.04280226.
Berry
,
J.
,
Grant
,
M.
, and
Elder
,
K. R.
, 2006
, “
Diffusive Atomistic Dynamics of Edge Dislocations in Two Dimensions
,” Phys. Rev. E
,
73
(3
), p. 031609
.10.1103/PhysRevE.73.03160927.
Berry
,
J.
,
Rottler
,
J.
,
Sinclair
,
C. W.
, and
Provatas
,
N.
, 2015
, “
Atomistic Study of Diffusion-Mediated Plasticity and Creep Using Phase Field Crystal Methods
,” Phys. Rev. B
,
92
(13
), p. 134103
.10.1103/PhysRevB.92.13410328.
Wu
,
K. A.
,
Adland
,
A.
, and
Karma
,
A.
, 2010
, “
Phase-Field-Crystal Model for FCC Ordering
,” Phys. Rev. E
,
81
(6
), p. 061601
.10.1103/PhysRevE.81.06160129.
Spiesshoefer
,
S.
,
Rahman
,
Z.
,
Vangara
,
G.
,
Polamreddy
,
S.
,
Burkett
,
S.
, and
Schaper
,
L.
, 2005
, “
Process Integration for Through-Silicon Vias
,” J. Vac. Sci. Technol. A: Vac., Surf., Films
,
23
(4
), pp. 824
–829
.10.1116/1.186401230.
Huang
,
Z.
,
Liu
,
J.
,
Conway
,
P. P.
,
Hu
,
Z.
, and
Liu
,
Y.
, 2016
, “
An Atomistic Study of Copper Extrusion in Through-Silicon-Via Using Phase Field Crystal Models
,” Sixth Electronic System-Integration Technology Conference
(ESTC
), Grenoble, France, Sept. 13–15, pp. 1
–8
.10.1109/ESTC.2016.776470031.
Stefanovic
,
P.
,
Haataja
,
M.
, and
Provatas
,
N.
, 2009
, “
Phase Field Crystal Study of Deformation and Plasticity in Nanocrystalline Materials
,” Phys. Rev. E
,
80
(4
), p. 046107
.10.1103/PhysRevE.80.04610732.
Liu
,
J.
,
Huang
,
Z.
,
Zhang
,
Y.
, and
Conway
,
P. P.
, 2019
, “
Mechanisms of Copper Protrusion in Through-Silicon-Via Structures at the Nanoscale
,” Jpn. J. Appl. Phys.
,
58
(1
), p. 016502
.10.7567/1347-4065/aae89833.
Heryanto
,
A.
,
Putra
,
W.
,
Trigg
,
A.
,
Gao
,
S.
,
Kwon
,
W.
,
Che
,
F.
,
Ang
,
X.
,
Wei
,
J.
,
I Made
,
R.
,
Gan
,
C.
, and
Pey
,
K.
, 2012
, “
Effect of Copper TSV Annealing on Via Protrusion for TSV Wafer Fabrication
,” J. Electron. Mater.
,
41
(9
), pp. 2533
–2542
.10.1007/s11664-012-2117-334.
Jiang
,
T.
,
Wu
,
C.
,
Spinella
,
L.
,
Im
,
J.
,
Tamura
,
N.
,
Kunz
,
M.
,
Son
,
H.-Y.
,
Kim
,
B. G.
,
Huang
,
R.
, and
Ho
,
P. S.
, 2013
, “
Plasticity Mechanism for Copper Extrusion in Through-Silicon Vias for Three-Dimensional Interconnects
,” Appl. Phys. Lett.
,
103
(21
), p. 211906
.10.1063/1.483302035.
Messemaeker
,
J. D.
,
Pedreira
,
O. V.
,
Philipsen
,
H.
,
Beyne
,
E.
,
Wolf
,
I. D.
,
der Donck
,
T. V.
, and
Croes
,
K.
, 2014
, “
Correlation Between Cu Microstructure and TSV Cu Pumping
,” IEEE 64th Electronic Components and Technology Conference
(ECTC
), Orlando, FL, May 27–30, pp. 613
–619
.10.1109/ECTC.2014.689734936.
Wang
,
Y.-J.
,
Ishii
,
A.
, and
Ogata
,
S.
, 2011
, “
Transition of Creep Mechanism in Nanocrystalline Metals
,” Phys. Rev. B
,
84
(22
), p. 224102
.10.1103/PhysRevB.84.22410237.
Wang
,
Y.-J.
,
Gao
,
G.-J. J.
, and
Ogata
,
S.
, 2013
, “
Atomistic Understanding of Diffusion Kinetics in Nanocrystals From Molecular Dynamics Simulations
,” Phys. Rev. B
,
88
(11
), p. 115413
.10.1103/PhysRevB.88.11541338.
Kang
,
M.-K.
,
Kim
,
D.-Y.
, and
Hwang
,
N. M.
, 2002
, “
Ostwald Ripening Kinetics of Angular Grains Dispersed in a Liquid Phase by Two-Dimensional Nucleation and Abnormal Grain Growth
,” J. Eur. Ceram. Soc.
,
22
(5
), pp. 603
–612
.10.1016/S0955-2219(01)00370-339.
Gottstein
,
G.
, 2013
, Physical Foundations of Materials Science
,
Springer Science & Business Media
, Berlin
.40.
Yang
,
X.-S.
,
Wang
,
Y.-J.
,
Zhai
,
H.-R.
,
Wang
,
G.-Y.
,
Su
,
Y.-J.
,
Dai
,
L.
,
Ogata
,
S.
, and
Zhang
,
T.-Y.
, 2016
, “
Time-, Stress-, and Temperature-Dependent Deformation in Nanostructured Copper: Creep Tests and Simulations
,” J. Mech. Phys. Solids
,
94
, pp. 191
–206
.10.1016/j.jmps.2016.04.02141.
Tian
,
T.
,
Morusupalli
,
R.
,
Shin
,
H.
,
Son
,
H.-Y.
,
Byun
,
K.-Y.
,
Joo
,
Y.-C.
,
Caramto
,
R.
,
Smith
,
L.
,
Shen
,
Y.-L.
,
Kunz
,
M.
,
Tamura
,
N.
, and
Budiman
,
A.
, 2016
, “
On the Mechanical Stresses of Cu Through-Silicon Via (TSV) Samples Fabricated by SK Hynix vs. SEMATECH – Enabling Robust and Reliable 3-D Interconnect/Integrated Circuit (IC) Technology
,” Procedia Eng.
,
139
, pp. 101
–111
.10.1016/j.proeng.2015.09.24242.
Spinella
,
L.
,
Im
,
J.
,
Tamura
,
N.
,
Jiang
,
T.
, and
Ho
,
P. S.
, 2017
, “
Synchrotron X-Ray Microdiffraction Investigation of Scaling Effects on Plasticity and the Correlation to TSV Extrusion
,” IEEE 67th Electronic Components and Technology Conference (ECTC)
, Orlando, FL, May 30–June 2, pp. 752
–757.
43.
Biswas
,
S.
,
Grant
,
M.
,
Samajdar
,
I.
,
Haldar
,
A.
, and
Sain
,
A.
, 2013
, “
Micromechanics of Emergent Patterns in Plastic Flows
,” Sci. Rep.
,
3
(1
), p. 2728
.10.1038/srep02728Copyright © 2020 by ASME
You do not currently have access to this content.
