This paper compares measurements made by Raman and infrared thermometry on a SOI (silicon on insulator) bent-beam thermal microactuator. Both techniques are noncontact and used to experimentally measure temperatures along the legs and on the shuttle of the thermal microactuators. Raman thermometry offers micron spatial resolution and measurement uncertainties of ±10 K; however, typical data collection times are a minute per location leading to measurement times on the order of hours for a complete temperature profile. Infrared thermometry obtains a full-field measurement so the data collection time is much shorter; however, the spatial resolution is lower and calibrating the system for quantitative measurements is challenging. By obtaining thermal profiles on the same SOI thermal microactuator, the relative strengths and weaknesses of the two techniques are assessed.

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